Product Datasheet Search Results:
3 Pages, 124 KB, Original- 2N7002TB
- Panjit Semiconductor
- 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
3 Pages, 124 KB, Original- 2N7002TBT/R7
- Panjit Semiconductor
- 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Product Details Search Results:
Panjit.com.tw/2N7002TB
{"Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.1500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","S...
1456 Bytes - 05:11:38, 20 September 2024
Panjit.com.tw/2N7002TBT/R7
{"Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.1500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","S...
1486 Bytes - 05:11:38, 20 September 2024
