Product Datasheet Search Results:

2SA1832-GR-TP.pdf2 Pages, 188 KB, Original
2SA1832-GR-TP
Micro Commercial Components Corp.
150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1832-Y-TP.pdf2 Pages, 188 KB, Original
2SA1832-Y-TP
Micro Commercial Components Corp.
150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1832.pdf1 Pages, 115 KB, Scan
2SA1832
N/a
Shortform IC and Component Datasheets (Plus Cross Reference Data)
2SA1832F.pdf3 Pages, 173 KB, Scan
2SA1832F
N/a
PNP transistor
2SA1832.pdf3 Pages, 131 KB, Original
2SA1832
Sensitron Semiconductor
Audio Frequency General Purpose Amplifier Applications
2SA1832.pdf3 Pages, 205 KB, Original
2SA1832F.pdf3 Pages, 130 KB, Original
2SA1832F
Toshiba
General Purpose Transistors (Single); Surface Mount Type: Y; Package: ESM; XJE016 JEITA: SC-89; Number of Pins: 3; Comments: General-purpose; Part Number: 2SC4738F; DC Current Gain hFE, min: (min 70) (max 400); DC Current Gain hFE, max: (max -0.3); Collector-Emitter Saturation Voltage V_CE(sat), max (V): (max -50)
2SA1832FGR.pdf3 Pages, 173 KB, Scan
2SA1832FGR
Toshiba
Silicon PNP Transistor
2SA1832F-GR(TPL3,F.pdf3 Pages, 209 KB, Original
2SA1832F-GR(TPL3,F
Toshiba
Trans GP BJT PNP 50V 0.15A 3-Pin ESM T/R
2SA1832FT.pdf3 Pages, 152 KB, Original
2SA1832FTGR.pdf3 Pages, 126 KB, Original
2SA1832FTGR
Toshiba
Silicon PNP Epitaxial Type (PCT process) Transistor
2SA1832FT-GR(T5L,F.pdf3 Pages, 158 KB, Original
2SA1832FT-GR(T5L,F
Toshiba
Trans GP BJT PNP 50V 0.15A 3-Pin TESM T/R

Product Details Search Results:

Mccsemi.com/2SA1832-GR-TP
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT, PLASTIC PACKAGE-3","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"200","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Terminal Position":"DUAL","Transistor Polarity":"PNP","Package Shape...
1393 Bytes - 11:48:21, 01 November 2024
Mccsemi.com/2SA1832-Y-TP
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT, PLASTIC PACKAGE-3","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"120","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Terminal Position":"DUAL","Transistor Polarity":"PNP","Package Shape...
1387 Bytes - 11:48:21, 01 November 2024
N_a/2SA1832
{"Category":"PNP Transistor, Transistor","Amps":"0.15A","MHz":">80 MHz","Volts":"50V"}...
522 Bytes - 11:48:21, 01 November 2024
Toshiba.co.jp/2SA1832
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-2H1A, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"70","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUA...
1421 Bytes - 11:48:21, 01 November 2024
Toshiba.co.jp/2SA1832F-GR(TPL3,F
{"Rad Hardened":"No","Collector Current (DC) ":"0.15 A","Transistor Polarity":"PNP","Collector-Emitter Voltage":"50 V","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Emitter-Base Voltage":"5 V","Category ":"Bipolar Small Signal","Packaging":"Tape and Reel","Power Dissipation":"0.1 W","Operating Temp Range":"-55C to 125C","Frequency":"80 MHz","Package Type":"ESM","Collector-Base Voltage":"50 V","DC Current Gain":"200","Pin Count":"3","Number of Elements":"1"}...
1531 Bytes - 11:48:21, 01 November 2024
Toshiba.co.jp/2SA1832FT-GR(T5L,F
862 Bytes - 11:48:21, 01 November 2024
Toshiba.co.jp/2SA1832FV
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-1L1A, VESM, 3 PIN","Terminal Form":"FLAT","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"120","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"PNP","Package ...
1392 Bytes - 11:48:21, 01 November 2024
Toshiba.co.jp/2SA1832FV-GR
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-1L1A, VESM, 3 PIN","Terminal Form":"FLAT","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"200","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"PNP","Package ...
1411 Bytes - 11:48:21, 01 November 2024
Toshiba.co.jp/2SA1832FV-Y
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-1L1A, VESM, 3 PIN","Terminal Form":"FLAT","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"120","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"PNP","Package ...
1403 Bytes - 11:48:21, 01 November 2024
Toshiba.co.jp/2SA1832F-Y(TPL3,F)
{"Rad Hardened":"No","Collector Current (DC) ":"0.15 A","Transistor Polarity":"PNP","Collector-Emitter Voltage":"50 V","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Emitter-Base Voltage":"5 V","Category ":"Bipolar Small Signal","Packaging":"Tape and Reel","Power Dissipation":"0.1 W","Operating Temp Range":"-55C to 125C","Frequency":"80 MHz","Package Type":"ESM","Collector-Base Voltage":"50 V","DC Current Gain":"120","Pin Count":"3","Number of Elements":"1"}...
1531 Bytes - 11:48:21, 01 November 2024
Toshiba.co.jp/2SA1832-GR
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-2H1A, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"200","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DU...
1440 Bytes - 11:48:21, 01 November 2024
Toshiba.co.jp/2SA1832GR
{"V(CE)sat Max.(V)":".3","Absolute Max. Power Diss. (W)":"100m","V(BR)CBO (V)":"50","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"200","I(C) Abs.(A) Collector Current":"150m","h(FE) Max. Current gain.":"400","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"50","Package":"SOT-416","f(T) Min. (Hz) Transition Freq":"80M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"10m","V(BR)CEO (V)":"50","Military":"N","@I(C) (A) (Test C...
1019 Bytes - 11:48:21, 01 November 2024

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