Datasheet.Directory

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2000 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"1 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"...

{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.2 A","Mounting":"Surface Mount","Drain-Source On-Volt":"60 V","Power Dissipation":"0.2 W","Operating Temp Range":"-55C to 150C","Package Type":"SMini","Rad Hardened":"No","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.2(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Pin Count":"3","Packaging":"Tape and Reel","Power Dissipation":"0.2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SMini","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"1(ohm)","Number of Elements":"1"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Typical Rise Time":"8 ns","Description":"Value","Maximum Continuous Drain Current":"0.2 A","Package":"3S-Mini","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"1000@10V mOhm","Manufacturer":"Toshiba","Typical Fall Time":"35 ns"}...