Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"300(W)","Continuous Drain Current":"429(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"24(V)","Packaging":"Rail\/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"6 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"230 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"240 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.00E-3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"1640 A","Channel Type":"N-CHA...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"230 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"240 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.00E-3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"1640 A","Channel Type":"N-CHA...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"230 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"240 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.00E-3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"1640 A","Channel Type":"N-CHA...