Product Datasheet Search Results:

BUZ110SE3045A.pdf8 Pages, 124 KB, Original
BUZ110SE3045A
Infineon Technologies
N-Channel SIPMOS Power Transistor

Product Details Search Results:

Infineon.com/BTS110 E3045A
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3.5V @ 1mA","Series":"TEMPFET\u00ae","Standard Package":"1,000","Supplier Device Package":"TO-220AB","Input Capacitance (Ciss) @ Vds":"600pF @ 25V","Rds On (Max) @ Id, Vgs":"200 mOhm @ 5A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"40W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type...
1574 Bytes - 12:17:51, 18 November 2024
Infineon.com/BTS110E3045A
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"10 A","Mounting":"Surface Mount","Drain-Source On-Volt":"100 V","Pin Count":"2 +Tab","Packaging":"Tape and Reel","Power Dissipation":"40 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-220AB SMD","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.2 ohm","Number of Elements":"1"}...
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Infineon.com/BTS110E3045ANTMA1
{"Polarity":"N","Gate-Source Voltage (Max)":"?20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"10 A","Mounting":"Surface Mount","Drain-Source On-Volt":"100 V","Pin Count":"2 +Tab","Packaging":"Tape and Reel","Power Dissipation":"40 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-220AB SMD","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.2 ohm","Number of Elements":"1"}...
1558 Bytes - 12:17:51, 18 November 2024
Infineon.com/BTS112AE3045A
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...
1539 Bytes - 12:17:51, 18 November 2024
Infineon.com/BTS113A E3045A
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 1mA","Input Capacitance (Ciss) @ Vds":"560pF @ 25V","Series":"TEMPFET\u00ae","Standard Package":"1,000","Supplier Device Package":"TO-220AB","Datasheets":"BTS113A","Rds On (Max) @ Id, Vgs":"170 mOhm @ 5.8A, 4.5V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"40W","Package / Case":"TO-263-3, D\u00b2Pak (2 Lead...
1710 Bytes - 12:17:51, 18 November 2024
Infineon.com/BTS113AE3045A
{"C(iss) Max. (F)":"560p","Absolute Max. Power Diss. (W)":"40","V(BR)DSS (V)":"60","g(fs) Max, (S) Trans. conduct,":"7.5","@V(GS) (V) (Test Condition)":"4.5","t(d)off Max. (s) Off time":"60n","r(DS)on Max. (Ohms)":"170m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"46","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"4.5","V(BR)GSS (V)":"10","@I(D) (A) (Test Condition)":"5.8","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"1.6","V(GS)th Min. (V)":"2.5","Package":"TO-263A...
1266 Bytes - 12:17:51, 18 November 2024
Infineon.com/BTS113AE3045ANT
1115 Bytes - 12:17:51, 18 November 2024
Infineon.com/BTS113AE3045ANTMA1
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd10 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"11.5 A","Mounting":"Surface Mount","Drain-Source On-Volt":"60 V","Pin Count":"2 +Tab","Packaging":"Tape and Reel","Power Dissipation":"40 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-220AB","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.17 ohm","Number of Elements":"1"}...
1544 Bytes - 12:17:51, 18 November 2024
Infineon.com/BTS114AE3045A
{"C(iss) Max. (F)":"600p","Absolute Max. Power Diss. (W)":"50","V(BR)DSS (V)":"50","g(fs) Max, (S) Trans. conduct,":"8.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"70n","r(DS)on Max. (Ohms)":"100m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"68","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"5.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"9","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"2.5","V(GS)th Min. (V)":"3.5","Package":"TO-263AB",...
1260 Bytes - 12:17:51, 18 November 2024
Infineon.com/BTS114AE3045ANTMA1
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"50(W)","Continuous Drain Current":"17(A)","Mounting":"Surface Mount","Rad Hardened":"No","Pin Count":"2 +Tab","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-220AB SMD","Type":"Power MOSFET","Drain-Source On-Res":"0.1(ohm)","Number of Elements":"1","Drain-Source On-Volt":"50(V)"}...
1546 Bytes - 12:17:51, 18 November 2024
Infineon.com/BTS117 E3045A
{"Category":"Integrated Circuits (ICs)","Voltage - Supply (Vcc/Vdd)":"Not Required","Fault Protection":"Current Limiting (Fixed), Over Temperature, Over Voltage","Operating Temperature":"-40\u00b0C ~ 150\u00b0C (TJ)","Current - Output (Max)":"3.5A","Input Type":"Non-Inverting","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Ratio - Input:Output":"1:1","Product Photos":"TO-263","Output Type":"N-Channel","Datasheets":"BTS117","Standard Package":"1,000","Interface":"On/Off","Number of Output...
2044 Bytes - 12:17:51, 18 November 2024
Infineon.com/BTS117E3045A
{"Package":"DPAK","VOH Max.":"60","t(PLH) Maximum (S)":"70u","Pins":"4","Military":"N","Outp Transis. Ion Max.":"3.5","Technology":"MOS"}...
644 Bytes - 12:17:51, 18 November 2024

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