Product Datasheet Search Results:
1 Pages, 45 KB, Scan- IRF531
- Fairchild Semiconductor Corporation
- 14 A, 80 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
4 Pages, 200 KB, Original- IRF531
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRF531
- Frederick Components
- Power MOSFET Selection Guide
2 Pages, 158 KB, Scan- IRF531
- Motorola / Freescale Semiconductor
- N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
5 Pages, 163 KB, Scan- IRF531
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 14A.
2 Pages, 130 KB, Scan- IRF531
- General Electric
- Power Transistor Data Book 1985
5 Pages, 170 KB, Scan- IRF531
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 390 KB, Scan- IRF531R
- Harris Semiconductor
- N-Channel Power MOSFETs Avalanche Energy Rated
1 Pages, 36 KB, Original- IRF531
- International Rectifier
- N-Channel Power MOSFETs
1 Pages, 41 KB, Original- IRF531R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
1 Pages, 32 KB, Original- IRF531
- National Semiconductor
- N-Channel Power MOSFETs
6 Pages, 354 KB, Scan- IRF531
- Samsung Electronics
- N-CHANNEL POWER MOSFETS
3 Pages, 188 KB, Scan- IRF531
- Stmicroelectronics
- N-channel MOSFET, 80V, 14A
3 Pages, 188 KB, Scan- IRF531F1
- Stmicroelectronics
- N-channel MOSFET, 80V, 9A
3 Pages, 188 KB, Scan- IRF531FI
- Stmicroelectronics
- IRF531FI
2 Pages, 72 KB, Scan- IRF531
- Supertex, Inc.
- N-Channel Enhancement-Mode Vertical DMOS Power FETs
Product Details Search Results:
Fairchildsemi.com/IRF531
{"Status":"TRANSFERRED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"56 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"69 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"14 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GEN...
1435 Bytes - 23:31:30, 19 September 2024
St.com/IRF531FI
{"C(iss) Max. (F)":"850p","Absolute Max. Power Diss. (W)":"35","r(DS)on Max. (Ohms)":"230m","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"8.3","@(VDS) (V) (Test Condition)":"20","Package":"TO-220AB","I(DSS) Min. (A)":"1.0m","Military":"N","t(r) Max. (s) Rise time":"75n","V(BR)DSS (V)":"80","t(f) Max. (s) Fall time.":"45n","g(fs) Min. (S) Trans. conduct.":"5.1","I(D) Abs. Drain Current (A)":"9.0"}...
912 Bytes - 23:31:30, 19 September 2024
Various/IRF531R
{"C(iss) Max. (F)":"600p","Absolute Max. Power Diss. (W)":"79","g(fs) Max, (S) Trans. conduct,":"7.6","I(D) Abs. Max.(A) Drain Curr.":"10","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"35n","r(DS)on Max. (Ohms)":"180m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"56","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"5.1","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"8.3","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Packa...
1292 Bytes - 23:31:30, 19 September 2024
