Datasheet.Directory

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"11 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.8 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SI...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"600mV @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"11A (Ta)","Gate Charge (Qg) @ Vgs":"125nC @ 5V","Product Photos":"8-SOIC","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"12 mOhm @ 11A, 4.5V","Datasheets":"IRF7220","FET Type":"MOSFET P-Channel, Metal Oxide","Standard Package":"95","Drain to Source Voltage ...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"110 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0120 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"600mV @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"11A (Ta)","Gate Charge (Qg) @ Vgs":"125nC @ 5V","Product Photos":"8-SOIC","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"12 mOhm @ 11A, 4.5V","Datasheets":"IRF7220GPBF","FET Type":"MOSFET P-Channel, Metal Oxide","Standard Package":"1","Drain to Source Volta...

{"Polarity":"P","Gate-Source Voltage (Max)":"\ufffd12 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"11 A","Mounting":"Surface Mount","Noise Figure":"Not Required dB","Drain-Source On-Volt":"14 V","Frequency (Max)":"Not Required MHz","Pin Count":"8","Power Dissipation":"2.5 W","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Output Power (Max)":"Not Required W","Rad Hardened":"No","Power Gain ":"Not Required dB","Type":"Power MOSFET"...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"110 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0120 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Cur...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"110 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0120 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (ID...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"600mV @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Gate Charge (Qg) @ Vgs":"125nC @ 5V","Product Photos":"8-SOIC","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"12 mOhm @ 11A, 4.5V","Datasheets":"IRF7220PbF","FET Type":"MOSFET P-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vdss)":"14V","PCN Obsolescence/ EOL":"Multiple Devices...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"2.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"11 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdo...

{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.8 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-sourc...

{"C(iss) Max. (F)":"600p","Absolute Max. Power Diss. (W)":"30","r(DS)on Max. (Ohms)":"2.5","I(GSS) Max. (A)":"500n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.8","@(VDS) (V) (Test Condition)":"20","Package":"TO-220AB","I(DSS) Min. (A)":"1.0m","Military":"N","t(r) Max. (s) Rise time":"50n","V(BR)DSS (V)":"400","t(f) Max. (s) Fall time.":"50n","g(fs) Min. (S) Trans. conduct.":"1.0","I(D) Abs. Drain Current (A)":"2.0"}...

{"C(iss) Max. (F)":"360p","Absolute Max. Power Diss. (W)":"50","g(fs) Max, (S) Trans. conduct,":"2.7","I(D) Abs. Max.(A) Drain Curr.":"1.8","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"45n","r(DS)on Max. (Ohms)":"2.5","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"11","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"1.8","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.8","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Packa...