Product Datasheet Search Results:
5 Pages, 158 KB, Scan- IRF821
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
4 Pages, 200 KB, Original- IRF821
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRF821
- Frederick Components
- Power MOSFET Selection Guide
2 Pages, 141 KB, Scan- IRF821
- Motorola / Freescale Semiconductor
- N-CHANNEL Enhancement-Mode Silicon Gate TMOS
5 Pages, 165 KB, Scan- IRF821
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A.
2 Pages, 127 KB, Scan- IRF821
- General Electric
- Power Transistor Data Book 1985
5 Pages, 176 KB, Scan- IRF821
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 190 KB, Scan- IRF821R
- Harris Semiconductor
- Power MOSFET Data Book 1990
1 Pages, 34 KB, Original- IRF821
- International Rectifier
- N-Channel Power MOSFETs
1 Pages, 48 KB, Original- IRF821R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
1 Pages, 31 KB, Original- IRF821
- National Semiconductor
- N-Channel Power MOSFETs
6 Pages, 323 KB, Scan- IRF821
- Samsung Electronics
- N-CHANNEL POWER MOSFETS
1 Pages, 71 KB, Scan- IRF821
- Semelab Plc.
- 2.5 A, 450 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
6 Pages, 342 KB, Scan- IRF821
- Stmicroelectronics
- N-channel MOSFET, 450V, 2.5A
6 Pages, 342 KB, Scan- IRF821FI
- Stmicroelectronics
- N-channel MOSFET, 450V, 2.0A
Product Details Search Results:
Semelab.co.uk/IRF821
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On ...
1293 Bytes - 00:04:41, 20 September 2024
Various/IRF821R
{"C(iss) Max. (F)":"360p","Absolute Max. Power Diss. (W)":"50","g(fs) Max, (S) Trans. conduct,":"2.3","I(D) Abs. Max.(A) Drain Curr.":"1.6","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"42n","r(DS)on Max. (Ohms)":"3.0","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"8.0","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"1.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.4","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Pack...
1295 Bytes - 00:04:41, 20 September 2024
