Product Datasheet Search Results:
10 Pages, 162 KB, Original- IRF830AS
- International Rectifier
- Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A)
10 Pages, 663 KB, Original- IRF830ASPBF
- International Rectifier
- HEXFET Power MOSFET
10 Pages, 162 KB, Original- IRF830ASTRL
- International Rectifier
- HEXFET Power MOSFET
10 Pages, 162 KB, Original- IRF830ASTRR
- International Rectifier
- HEXFET Power MOSFET
9 Pages, 1097 KB, Original- IRF830AS
- Vishay [siliconix]
- MOSFET N-CH 500V 5A D2PAK - IRF830AS
10 Pages, 211 KB, Original- IRF830ASPBF
- Vishay [siliconix]
- MOSFET N-CH 500V 5A D2PAK - IRF830ASPBF
9 Pages, 1097 KB, Original- IRF830ASTRL
- Vishay [siliconix]
- MOSFET N-CH 500V 5A D2PAK - IRF830ASTRL
10 Pages, 211 KB, Original- IRF830ASTRLPBF
- Vishay [siliconix]
- MOSFET N-CH 500V 5.0A D2PAK - IRF830ASTRLPBF
11 Pages, 186 KB, Original- IRF830ASTRR
- Vishay Presicion Group
- 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
10 Pages, 663 KB, Original- IRF830ASTRRPBF
- Vishay Presicion Group
- 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Vishay.com/IRF830AS
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"620pF @ 25V","Series":"-","Standard Package":"50","Supplier Device Package":"D2PAK","Datasheets":"IRF830A,SiHF830A","Rds On (Max) @ Id, Vgs":"1.4 Ohm @ 3A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"3.1W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Moun...
1561 Bytes - 10:50:47, 17 November 2024
Vishay.com/IRF830ASPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Catalog Drawings":"IR(F,L,Z) Series Side 1 IR(F,L,Z) Series Side 2","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"5A (Tc)","Gate Charge (Qg) @ Vgs":"24nC @ 10V","Product Photos":"TO-263","Rds On (Max) @ Id, Vgs":"1.4 Ohm @ 3A, 10V","Datasheets":"IRF830AS,AL, SiHF830AS,AL","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Packag...
1829 Bytes - 10:50:47, 17 November 2024
Vishay.com/IRF830ASTRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Series":"-","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRF830A,SiHF830A","Rds On (Max) @ Id, Vgs":"1.4 Ohm @ 3A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"3.1W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount","Drain ...
1572 Bytes - 10:50:47, 17 November 2024
Vishay.com/IRF830ASTRLPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Series":"-","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRF830AS,AL, SiHF830AS,AL","Rds On (Max) @ Id, Vgs":"1.4 Ohm @ 3A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"3.1W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount...
1611 Bytes - 10:50:47, 17 November 2024
Vishay.com/IRF830ASTRR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"3.1 W","Avalanche Energy Rating (Eas)":"230 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":...
1548 Bytes - 10:50:47, 17 November 2024
Vishay.com/IRF830ASTRRPBF
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"3.1 W","Avalanche Energy Rating (Eas)":"230 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A"...
1633 Bytes - 10:50:47, 17 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF8313.pdf | 0.25 | 1 | Request |
