Product Datasheet Search Results:
- IRF830BJ69Z
- Fairchild Semiconductor Corporation
- 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Fairchildsemi.com/IRF830BJ69Z
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"18 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"270 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"4.5 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL...
1476 Bytes - 07:40:57, 17 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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IRF8313.pdf | 0.25 | 1 | Request |