Product Datasheet Search Results:
- IRF830I-HF
- Advanced Power Electronics Corp. Usa
- 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
A-power.com.tw/IRF830I-HF
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"101 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","...
1545 Bytes - 07:42:33, 17 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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IRF8313.pdf | 0.25 | 1 | Request |