Product Datasheet Search Results:
2 Pages, 110 KB, Scan- IRFD112
- General Electric Solid State
- Power MOSFET field effect power transistor.
2 Pages, 119 KB, Scan- IRFD112
- General Electric
- Power Transistor Data Book 1985
5 Pages, 173 KB, Scan- IRFD112
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 174 KB, Scan- IRFD112R
- Harris Semiconductor
- Power MOSFET Data Book 1990
1 Pages, 40 KB, Original- IRFD112
- International Rectifier
- N-CHANNEL, Si, SMALL SIGNAL, MOSFET
1 Pages, 41 KB, Original- IRFD112R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
67 Pages, 163 KB, Original- IRFD112(R)
- Toshiba
- Power MOSFETs Cross Reference Guide
Product Details Search Results:
Irf.com/IRFD112
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"DIP-4","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.8000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Number of Elements":"1","Number...
1203 Bytes - 02:00:28, 17 November 2024
Various/IRFD112R
{"C(iss) Max. (F)":"135p","Absolute Max. Power Diss. (W)":"1.0","V(BR)DSS (V)":"100","g(fs) Max, (S) Trans. conduct,":"1.2","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"25n","r(DS)on Max. (Ohms)":"800m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"6.4","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"800m","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"800m","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-250v...
1270 Bytes - 02:00:28, 17 November 2024
Documentation and Support
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| VQD1121-5MO-M5.pdf | 1.16 | 1 | Request |
