Product Datasheet Search Results:
7 Pages, 92 KB, Original- IRFD9110
- Fairchild Semiconductor
- 0.7a 100v 1.200 Ohm P-channel Power Mosfet
1 Pages, 78 KB, Scan- IRFD9110
- Motorola / Freescale Semiconductor
- P-Channel Enhancement TMOS FET Transistors
5 Pages, 170 KB, Scan- IRFD9110
- Harris Semiconductor
- Power MOSFET Data Book 1990
6 Pages, 55 KB, Original- IRFD9110
- Intersil Corporation
- 0.7A, 100V, 1.200 ?, P-Channel Power MOSFET
6 Pages, 173 KB, Scan- IRFD9110
- International Rectifier
- HEXFET Power MOSFET
6 Pages, 173 KB, Scan- IRFD9110PBF
- International Rectifier
- 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
9 Pages, 798 KB, Original- IRFD9110
- Vishay [siliconix]
- MOSFET P-CH 100V 700MA 4-DIP - IRFD9110
9 Pages, 798 KB, Original- IRFD9110PBF
- Vishay [siliconix]
- MOSFET P-CH 100V 700MA 4-DIP - IRFD9110PBF
Product Details Search Results:
Irf.com/IRFD9110PBF
{"Status":"DISCONTINUED","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"LEAD FREE, DIP-4","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Transistor Application":"SWITCHING","Channel Type":"P-CHANNEL","Drain-source On Resistance-Max":"1.2 ohm","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type...
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Siliconix_vishay/IRFD9110PBF
801 Bytes - 21:48:56, 19 September 2024
Vishay.com/IRFD9110
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.2 Ohm @ 420mA, 10V","FET Feature":"Standard","Product Photos":"4-DIP","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"2,500","Supplier Device Package":"4-DIP, Hexdip, HVMDIP","Other Names":"*IRFD9110","Packaging":"Tube","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"IRFD9110","Power - Max":"1.3W","Package \/ Case":"4-DIP (0.300\", 7.62mm)","Mounting Type":"Through Hole","Drain...
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Vishay.com/IRFD9110PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IR(F,L)D Series Side 1 IR(F,L)D Series Side 2","Package \/ Case":"4-DIP (0.300\", 7.62mm)","Current - Continuous Drain (Id) @ 25\u00b0C":"700mA (Ta)","Gate Charge (Qg) @ Vgs":"8.7nC @ 10V","Product Photos":"4-DIP","Rds On (Max) @ Id, Vgs":"1.2 Ohm @ 420mA, 10V","Datasheets":"IRFD9110","FET Type":"MOSFET P-Channel, Metal Oxide","Standard Package":"2,500","Drain to Source Voltage (...
1768 Bytes - 21:48:56, 19 September 2024
Vishay_pcs/IRFD9110PBF
{"Category":"Power MOSFET","Dimensions":"6.29 x 5 x 3.37 mm","Maximum Continuous Drain Current":"-0.49 A","Width":"5 mm","Maximum Drain Source Voltage":"-100 V","Package Type":"HVMDIP","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+175 \u00b0C","Typical Gate Charge @ Vgs":"Maximum of 8.7 nC @ -10 V","Operating Temperature Range":"-55 to +175 \u00b0C","Typical Turn On Delay Time":"10 ns","Channel Type":"P","Typical Input Capacitance @ Vds":"200 pF @ -25 V","Lengt...
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