Product Datasheet Search Results:
4 Pages, 200 KB, Original- IRFP451
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRFP451
- Frederick Components
- Power MOSFET Selection Guide
2 Pages, 124 KB, Scan- IRFP451
- General Electric
- Power Transistor Data Book 1985
5 Pages, 206 KB, Scan- IRFP451
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 205 KB, Scan- IRFP451R
- Harris Semiconductor
- Power MOSFET Data Book 1990
1 Pages, 39 KB, Original- IRFP451
- International Rectifier
- TO-247 HEXFET Power MOSFETs
1 Pages, 48 KB, Original- IRFP451R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
1 Pages, 49 KB, Scan- IRFP451
- Ixys Corporation
- HIGH VOLTAGE POWER MOSFET DIE
1 Pages, 35 KB, Original- IRFP451
- National Semiconductor
- N-Channel Power MOSFETs
Product Details Search Results:
St.com/IRFP451
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"56 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"760 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"14 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER...
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St.com/IRFP451FI
{"C(iss) Max. (F)":"3.0n","Absolute Max. Power Diss. (W)":"70","r(DS)on Max. (Ohms)":"400m","I(GSS) Max. (A)":"500n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"7.9","@(VDS) (V) (Test Condition)":"20","Package":"TO-218var","I(DSS) Min. (A)":"250u","Military":"N","t(r) Max. (s) Rise time":"50n","V(BR)DSS (V)":"450","t(f) Max. (s) Fall time.":"70n","g(fs) Min. (S) Trans. conduct.":"9.3","I(D) Abs. Drain Current (A)":"9.0"}...
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Various/IRFP451R
{"C(iss) Max. (F)":"2.0n","Absolute Max. Power Diss. (W)":"180","V(BR)DSS (V)":"450","g(fs) Max, (S) Trans. conduct,":"13.8","I(D) Abs. Max.(A) Drain Curr.":"8.8","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"100n","r(DS)on Max. (Ohms)":"400m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"56","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"9.3","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"7.9","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(G...
1265 Bytes - 22:14:28, 16 November 2024
