Product Datasheet Search Results:
11 Pages, 331 KB, Original- IRFR1010ZTRLPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 55V 91A 3-Pin(2+Tab) DPAK T/R
11 Pages, 331 KB, Original- IRFR1010ZTRPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 55V 91A 3-Pin(2+Tab) DPAK T/R
13 Pages, 243 KB, Original- AUIRFR1010ZTR
- International Rectifier
- 42 A, 55 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
12 Pages, 669 KB, Original- AUIRFR1010ZTRL
- International Rectifier
- MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms
12 Pages, 669 KB, Original- AUIRFR1010ZTRR
- International Rectifier
- MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms
12 Pages, 360 KB, Original- IRFR1010ZTR
- International Rectifier
- 42 A, 55 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
11 Pages, 331 KB, Original- IRFR1010ZTRLPBF
- International Rectifier
- MOSFET N-CH 55V 42A DPAK - IRFR1010ZTRLPBF
11 Pages, 331 KB, Original- IRFR1010ZTRPBF
- International Rectifier
- MOSFET N-CH 55V 42A DPAK - IRFR1010ZTRPBF
12 Pages, 360 KB, Original- IRFR1010ZTRR
- International Rectifier
- 42 A, 55 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
11 Pages, 331 KB, Original- IRFR1010ZTRRPBF
- International Rectifier
- MOSFET N-CH 55V 42A DPAK - IRFR1010ZTRRPBF
Product Details Search Results:
Infineon.com/IRFR1010ZTRLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"91(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"140(W)","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1544 Bytes - 23:25:17, 27 December 2024
Infineon.com/IRFR1010ZTRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"91(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"140(W)","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1540 Bytes - 23:25:17, 27 December 2024
Irf.com/AUIRFR1010ZTR
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"110 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"42 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0075 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"360 A","Channel Type":"N-CHAN...
1619 Bytes - 23:25:17, 27 December 2024
Irf.com/AUIRFR1010ZTRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 100\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"42A (Tc)","Gate Charge (Qg) @ Vgs":"95nC @ 10V","Product Photos":"TO-252-3","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"7.5 mOhm @ 42A, 10V","Datasheets":"AUIRFR1010Z","...
1825 Bytes - 23:25:17, 27 December 2024
Irf.com/AUIRFR1010ZTRR
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"110 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"42 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0075 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"360 A","Channel Type":"N-CHAN...
1623 Bytes - 23:25:17, 27 December 2024
Irf.com/IRFR1010ZTR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"110 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"42 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0075 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"360 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...
1537 Bytes - 23:25:17, 27 December 2024
Irf.com/IRFR1010ZTRLPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 100\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"42A (Tc)","Gate Charge (Qg) @ Vgs":"95nC @ 10V","Product Photos":"TO-252-3","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"7.5 mOhm @ 42A, 10V","Datasheets":"IRF(R,U)1010ZPbF","F...
1893 Bytes - 23:25:17, 27 December 2024
Irf.com/IRFR1010ZTRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 100\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"42A (Tc)","Gate Charge (Qg) @ Vgs":"95nC @ 10V","Product Photos":"TO-252-3","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"7.5 mOhm @ 42A, 10V","Datasheets":"IRF(R,U)1010ZPbF","F...
1885 Bytes - 23:25:17, 27 December 2024
Irf.com/IRFR1010ZTRR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"110 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"42 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0075 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"360 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...
1545 Bytes - 23:25:17, 27 December 2024
Irf.com/IRFR1010ZTRRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 100\u00b5A","Series":"HEXFET\u00ae","Standard Package":"3,000","Supplier Device Package":"D-Pak","Datasheets":"IRF(R,U)1010ZPbF","Rds On (Max) @ Id, Vgs":"7.5 mOhm @ 42A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"140W","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Mounting Type":"Surface Mount","...
1626 Bytes - 23:25:17, 27 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRFR1010Z.pdf | 0.29 | 1 | Request |
