Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"12(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"500(V)","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-204AE","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"8 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"500 mOhm @ 12A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/543","Package / Case":"TO-204AE","Supplier Device Package":"TO-204AE (TO-3)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6764,66,68,70","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":"500V","Current - Co...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"500 mOhm @ 12A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/543","Package / Case":"TO-254-3, TO-254AA (Straight Leads)","Supplier Device Package":"TO-254AA","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6764,66,68,70T1","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)...