Product Datasheet Search Results:

KV2101.pdf1 Pages, 17 KB, Original
KV2101
Advanced Semiconductor, Inc.
Silicon Hyperabrupt Tuning Varactor
KV2101-150.pdf1 Pages, 35 KB, Original
KV2101-150
Advanced Semiconductor, Inc.
Silicon Hyperabrupt Tuning Varactor
KV2101A.pdf1 Pages, 17 KB, Original
KV2101A
Advanced Semiconductor, Inc.
Silicon Hyperabrupt Tuning Varactor
KV2101.pdf2 Pages, 102 KB, Scan
KV2101
Loral
UHF Hyperabrupt Tuning Varactors
KV2101A.pdf2 Pages, 102 KB, Scan
KV2101A
Loral
UHF Hyperabrupt Tuning Varactors
KV2101.pdf1 Pages, 45 KB, Scan
KV2101A.pdf1 Pages, 45 KB, Scan
KV2101B.pdf1 Pages, 45 KB, Scan
KV2101B
Knox Semiconductor, Inc.
30V Vrrm, 6.8pF Capacitance Varactor Diode
KV2101C.pdf1 Pages, 45 KB, Scan
KV2101C
Knox Semiconductor, Inc.
30V Vrrm, 6.8pF Capacitance Varactor Diode
KV2101D.pdf1 Pages, 45 KB, Scan
KV2101D
Knox Semiconductor, Inc.
30V Vrrm, 6.8pF Capacitance Varactor Diode
KV2101B.pdf1 Pages, 45 KB, Scan
KV2101B
Knox Semiconductor, Inc.
30V Vrrm, 6.8pF Capacitance Varactor Diode
KV2101C.pdf1 Pages, 45 KB, Scan
KV2101C
Knox Semiconductor, Inc.
30V Vrrm, 6.8pF Capacitance Varactor Diode

Product Details Search Results:

Knoxsemiconductor.com/KV2101B
{"C1/C2 Min. Capacitance Ratio":"2.5","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"450","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"6.8p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4","@V(Q min)(V) (Test Condition)":"4"}...
882 Bytes - 11:29:13, 01 November 2024
Knoxsemiconductor.com/KV2101C
{"C1/C2 Min. Capacitance Ratio":"2.5","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"450","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"6.8p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4","@V(Q min)(V) (Test Condition)":"4"}...
881 Bytes - 11:29:13, 01 November 2024
Knoxsemiconductor.com/KV2101D
{"C1/C2 Min. Capacitance Ratio":"2.5","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"450","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"6.8p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4","@V(Q min)(V) (Test Condition)":"4"}...
882 Bytes - 11:29:13, 01 November 2024
Microsemi.com/KV2101
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Frequency Band":"ULTRA HIGH FREQUENCY","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"5","Variable Capacitance Diode Classification":"HYPERABRUPT","Package Style":"LONG FORM","Breakdown Voltage-Min":"22 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"11.5 pF","Diode Cap Tolerance":"8.69 %","Quality Factor-Min":"300","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":...
1289 Bytes - 11:29:13, 01 November 2024
Microsemi.com/KV2101-11
{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Frequency Band":"ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"22 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"5.4","Variable Capacitance Diode Classification":"HYPERABRUPT","Number of Terminals":"2","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"500 pF","Case Connection":"ISOLATED","Quality Factor-Min":"300","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape...
1302 Bytes - 11:29:13, 01 November 2024
Microsemi.com/KV2101-15
{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Frequency Band":"ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"22 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"5.4","Variable Capacitance Diode Classification":"HYPERABRUPT","Number of Terminals":"2","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"200 pF","Case Connection":"ISOLATED","Quality Factor-Min":"300","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape...
1302 Bytes - 11:29:13, 01 November 2024
Microsemi.com/KV2101A
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Frequency Band":"ULTRA HIGH FREQUENCY","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"5","Variable Capacitance Diode Classification":"HYPERABRUPT","Package Style":"LONG FORM","Breakdown Voltage-Min":"22 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"11.5 pF","Diode Cap Tolerance":"5.21 %","Quality Factor-Min":"300","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":...
1296 Bytes - 11:29:13, 01 November 2024
Microsemi.com/KV2101A-00
{"Status":"ACTIVE","Diode Type":"VARIABLE CAPACITANCE DIODE"}...
738 Bytes - 11:29:13, 01 November 2024
Microsemi.com/KV2101A-11
{"Status":"ACTIVE","Diode Type":"VARIABLE CAPACITANCE DIODE"}...
740 Bytes - 11:29:13, 01 November 2024
Microsemi.com/KV2101A-15
{"Status":"ACTIVE","Diode Type":"VARIABLE CAPACITANCE DIODE"}...
739 Bytes - 11:29:13, 01 November 2024
Microsemi.com/KV2101A-17
{"Status":"ACTIVE","Diode Type":"VARIABLE CAPACITANCE DIODE"}...
741 Bytes - 11:29:13, 01 November 2024
Microsemi.com/KV2101A-30
{"Status":"ACTIVE","Diode Type":"VARIABLE CAPACITANCE DIODE"}...
738 Bytes - 11:29:13, 01 November 2024

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