Product Datasheet Search Results:
10 Pages, 346 KB, Original- SPB02N60S5
- Infineon Technologies
- MOSFET N-CH 600V 1.8A TO-263 - SPB02N60S5
10 Pages, 476 KB, Original- SPB02N60S5E3045
- Infineon Technologies
- Transistor Mosfet N-CH 600V 1.8A 3P-TO263-3-2 T/R
10 Pages, 339 KB, Original- SPB02N60S5 E3045A
- Infineon Technologies
- Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) TO-263 T/R
9 Pages, 115 KB, Original- SPB02N60S5 SMD
- Infineon Technologies
- CoolMOS Power MOSFET, 600V, D2PAK, RDSon=3.00 ?, 1.8A
67 Pages, 163 KB, Original- SPB02N60S5
- Toshiba
- Power MOSFETs Cross Reference Guide
Product Details Search Results:
Infineon.com/SPB02N60S5
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"3 Ohm @ 1.1A, 10V","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5.5V @ 80\u00b5A","Series":"CoolMOS\u2122","Standard Package":"1,000","Supplier Device Package":"PG-TO263-3","Other Names":"SP000012388 SPB02N60S5-ND SPB02N60S5ATMA1 SPB02N60S5INTR SPB02N60S5XT","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"SPB02N60S5","Power - Max":"25W","Package...
1827 Bytes - 23:57:19, 15 January 2025
Infineon.com/SPB02N60S5 E3045A
{"Category":"MOSFET","Maximum Drain Source Voltage":"600 V","Description":"Value","Maximum Continuous Drain Current":"1.8 A","Package":"3TO-263","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"35 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"3000@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"20 ns"}...
1398 Bytes - 23:57:19, 15 January 2025
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| SPB02N60S5.pdf | 0.33 | 1 | Request |
