Datasheet.Directory

{"Status":"Active"}...

{"Terminal Form":"WIRE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"LOW THRESHOLD","Status":"Transferred","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-W3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO"...

{"Terminal Form":"WIRE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"LOW THRESHOLD","Status":"Transferred","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-W3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO"...

{"Terminal Form":"WIRE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"LOW THRESHOLD","Status":"Transferred","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-W3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO"...

{"Terminal Form":"WIRE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"LOW THRESHOLD","Status":"Transferred","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-W3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO"...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Active","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Drain Current-Max (Abs) (ID)":"0.0990 A","Sub Category":"FET General Purpose Power","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm",...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Active","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Feedback Cap-Max (Crss)":"5 pF","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Moisture Sensitivity Level":"NOT SPECIFIED"...

{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface M...

{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface M...

{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface M...

{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface M...

{"Terminal Form":"WIRE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Transferred","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Drain Current-Max (Abs) (ID)":"0.0990 A","Sub Category":"FET General Purpose Power","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Feedback Cap-Max (Crss)":"5 pF","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE ...

{"Status":"Transferred","Package Body Material":"PLASTIC\/EPOXY","Configuration":"SINGLE","JESD-30 Code":"O-PBCY-T3","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT MODE","Polarity\/Channel Type":"N-CHANNEL","Number of Terminals":"3","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Package Style":"CYLINDRICAL","Drain Current-Max (ID)":"0.1500 A","Qualification Status":"COMMERCIAL","Transistor Element Material":"SILICON","Feedback Cap-Max (Crss)":"5 pF","Terminal Position":"BOTTOM","Package Shape":...

{"Status":"Transferred","Package Body Material":"PLASTIC\/EPOXY","Configuration":"SINGLE","JESD-30 Code":"O-PBCY-T3","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT MODE","Polarity\/Channel Type":"N-CHANNEL","Number of Terminals":"3","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Package Style":"CYLINDRICAL","Drain Current-Max (ID)":"0.1500 A","Qualification Status":"COMMERCIAL","Transistor Element Material":"SILICON","Feedback Cap-Max (Crss)":"5 pF","Terminal Position":"BOTTOM","Package Shape":...

{"Status":"Discontinued","Operating Mode":"ENHANCEMENT MODE","Polarity\/Channel Type":"N-CHANNEL","Power Dissipation-Max (Abs)":"0.4000 W","Operating Temperature-Max":"150 Cel","Drain Current-Max (Abs) (ID)":"0.0990 A","Sub Category":"FET General Purpose Power","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Configuration":"Single","Surface Mount":"NO"}...

{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Transferred","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mo...

{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface M...

{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface M...

{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"EUROPEAN PART NUMBER","Status":"Transferred","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Tra...

{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"EUROPEAN PART NUMBER","Status":"Transferred","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Tra...

{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Transferred","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mo...

{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface M...

{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Transferred","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mo...

{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface M...

{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Transferred","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mo...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor A...

{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"EUROPEAN PART NUMBER","Status":"Transferred","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Tra...

{"Status":"Discontinued","Operating Mode":"ENHANCEMENT MODE","Polarity\/Channel Type":"N-CHANNEL","Power Dissipation-Max (Abs)":"0.4000 W","Operating Temperature-Max":"150 Cel","Drain Current-Max (Abs) (ID)":"0.0990 A","Sub Category":"FET General Purpose Power","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Configuration":"Single","Surface Mount":"NO"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 1mA","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Datasheets":"VN2222LL","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"1W","Standard Package":"1,000",...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Brand":"Microchip Technology","Id - Continuous Drain Current":"230 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"7.5 Ohms","Package \/ Case":"TO-92-3","Vgs - Gate-Source Breakdown Voltage":"30 V","Configuration":"Single","Max...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Series":"-","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 1mA","PCN Assembly\/Origin":"Additional Fabrication Site 03\/Sep\/2014 Fab Site Addition 14\/Aug\/2014","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads","Supplier Device Package":"TO-92-3","Datasheets":"VN2222LL","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Channel Mode":"Enhancement","Brand":"Microchip Technology","Id - Continuous Drain Current":"230 mA","Mounting Style":"Through Hole","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"7.5 Ohms","Package \/ Case":"TO-92-3","RoHS":"Details","Manufacturer":"Microchip"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Series":"-","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 1mA","PCN Assembly\/Origin":"Additional Fabrication Site 03\/Sep\/2014 Fab Site Addition 14\/Aug\/2014","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads","Supplier Device Package":"TO-92-3","Datasheets":"VN2222LL","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Brand":"Microchip Technology","Id - Continuous Drain Current":"230 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"7.5 Ohms","Package \/ Case":"TO-92-3","Vgs - Gate-Source Breakdown Voltage":"30 V","Configuration":"Single","Max...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 500mA, 10V","FET Feature":"Standard","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 1mA","Series":"-","Standard Package":"1,000","Supplier Device Package":"TO-92-3","Other Names":"VN2222LLOS","Packaging":"Tape & Box (TB)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"VN2222LL","Power - Max":"400mW","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA) For...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 500mA, 10V","FET Feature":"Standard","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 1mA","Series":"-","Standard Package":"1,000","Supplier Device Package":"TO-92-3","Other Names":"VN2222LLGOS","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"VN2222LL","Power - Max":"400mW","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads"...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Package Shape":"ROUND","Additional Feature":"EUROPEAN PART NUMBER","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Feedback Cap-Max (Crss)":"5 pF","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resi...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 500mA, 10V","FET Feature":"Standard","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 1mA","Series":"-","Standard Package":"2,000","Supplier Device Package":"TO-92-3","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"VN2222LL","Power - Max":"400mW","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads","Mounting Type"...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 500mA, 10V","FET Feature":"Standard","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 1mA","Series":"-","Standard Package":"1","Supplier Device Package":"TO-92-3","Other Names":"VN2222LLRLRAGOSCT","Packaging":"Cut Tape (CT)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"VN2222LL","Power - Max":"400mW","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA) Fo...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Feedback Cap-Max (Crss)":"5 pF","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Moisture Sensitivity ...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Package Shape":"ROUND","Additional Feature":"EUROPEAN PART NUMBER","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Feedback Cap-Max (Crss)":"5 pF","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resi...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Package Shape":"ROUND","Additional Feature":"HIGH INPUT IMPEDANCE","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Drain Current-Max (Abs) (ID)":"0.0990 A","Sub Category":"FET General Purpose Power","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration...

{"Terminal Finish":"MATTE TIN","Terminal Form":"WIRE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e3","Package Shape":"ROUND","Additional Feature":"LOW THRESHOLD","Status":"Active","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Drain Current-Max (Abs) (ID)":"0.0990 A","Sub Category":"FET General Purpose Power","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT...