Product Datasheet Search Results:
4 Pages, 381 KB, Scan- APT8075
- Advanced Power Technology
- TRANSISTOR,MOSFET,N-CHANNEL
4 Pages, 209 KB, Original- APT8075AN
- Advanced Power Technology
- Power MOS IV
4 Pages, 260 KB, Scan- APT8075BN
- Advanced Power Technology
- Power MOS IV - N-channel Enhancement Mode High Voltage Power MOSFETS
4 Pages, 187 KB, Original- APT8075BNR
- Advanced Power Technology
- Power MOS IV
4 Pages, 50 KB, Original- APT8075BVFR
- Advanced Power Technology
- High voltage N-Channel enhancement mode power MOSFET
4 Pages, 44 KB, Original- APT8075BVR
- Advanced Power Technology
- High voltage N-Channel enhancement mode power MOSFET
4 Pages, 383 KB, Original- APT8075DN
- Advanced Power Technology
- APT Power MOS IV Commercial and Custom DIE
4 Pages, 89 KB, Original- APT8075BNG
- Microsemi
- Trans MOSFET N-CH 800V 13A 3-Pin(3+Tab) TO-247AD
4 Pages, 65 KB, Original- APT8075BVFR
- Microsemi Corp.
- 12 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
4 Pages, 50 KB, Original- APT8075BVFRG
- Microsemi
- MOSFET N-CH 800V 12A TO-247 - APT8075BVFRG
Product Details Search Results:
Advancedpower.com/APT8075AN
{"C(iss) Max. (F)":"2.45n","t(r) Max. (s) Rise time":"36n","Absolute Max. Power Diss. (W)":"230","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"250u","@(VDS) (V) (Test Condition)":"30","V(BR)DSS (V)":"800","V(BR)GSS (V)":"30","t(f) Max. (s) Fall time.":"48n","I(D) Abs. Drain Current (A)":"11.5","Package":"TO-3","Military":"N","r(DS)on Max. (Ohms)":"750m"}...
910 Bytes - 06:26:02, 11 January 2025
Advancedpower.com/APT8075DN
{"@V(DS) (V) (Test Condition)":"1k","Package":"Chip","I(DSS) Max. (A)":"250u","I(GSS) Max. (A)":"100n","V(BR)DSS (V)":"800","@I(D) (A) (Test Condition)":"1","Military":"N","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"750m","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2"}...
796 Bytes - 06:26:02, 11 January 2025
Advancedpower.com/APT8075HN
{"C(iss) Max. (F)":"2.95n","Absolute Max. Power Diss. (W)":"250","Package":"TO-258iso","V(BR)DSS (V)":"800","I(D) Abs. Drain Current (A)":"11.5","Military":"N","r(DS)on Max. (Ohms)":"750m"}...
703 Bytes - 06:26:02, 11 January 2025
Advancedpower.com/APT8075SN
{"C(iss) Max. (F)":"2.95n","Absolute Max. Power Diss. (W)":"310","V(BR)DSS (V)":"800","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"105n","r(DS)on Max. (Ohms)":".75","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"52","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"30","@I(D) (A) (Test Condition)":"6.5","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-263AB","Military":"N","td(on) Max (s) On time delay":"34n","I(DSS) Max. (A)":"...
1244 Bytes - 06:26:02, 11 January 2025
Microsemi.com/APT8075BNG
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"13(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"800(V)","Power Dissipation":"310(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-247AD","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1413 Bytes - 06:26:02, 11 January 2025
Microsemi.com/APT8075BVFR
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.7500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS B...
1501 Bytes - 06:26:02, 11 January 2025
Microsemi.com/APT8075BVFRG
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.7500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"N-CHANNE...
1558 Bytes - 06:26:02, 11 January 2025
Microsemi.com/APT8075BVR
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.7500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS B...
1450 Bytes - 06:26:02, 11 January 2025
Microsemi.com/APT8075BVRG
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.7500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"N-CHANNE...
1508 Bytes - 06:26:02, 11 January 2025
