Product Datasheet Search Results:
4 Pages, 94 KB, Original- IRF830
- Advanced Power Electronics Corp. Usa
- 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
4 Pages, 96 KB, Original- IRF830I-HF
- Advanced Power Electronics Corp. Usa
- 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
3 Pages, 40 KB, Original- IRF830
- Bay Linear, Inc.
- POWER MOSFET
8 Pages, 285 KB, Original- IRF830
- Fairchild Semiconductor
- Trans MOSFET N-CH 500V 4.5A 3-Pin TO-220AB
6 Pages, 150 KB, Original- IRF830A
- Fairchild Semiconductor
- Advanced Power MOSFET
7 Pages, 184 KB, Scan- IRF830AJ69Z
- Fairchild Semiconductor Corporation
- 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
10 Pages, 888 KB, Original- IRF830B
- Fairchild Semiconductor
- 500 V N-Channel MOSFET
10 Pages, 888 KB, Original- IRF830BJ69Z
- Fairchild Semiconductor Corporation
- 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
8 Pages, 285 KB, Original- IRF830_NL
- Fairchild Semiconductor
- Trans MOSFET N-CH 500V 4.5A 3-Pin (3+Tab) TO-220AB
6 Pages, 150 KB, Original- IRF830S
- Fairchild Semiconductor
- Advanced Power MOSFET
4 Pages, 200 KB, Original- IRF830
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRF830
- Frederick Components
- Power MOSFET Selection Guide
Product Details Search Results:
A-power.com.tw/IRF830
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT, TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"18 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"101 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"4.5 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transisto...
1470 Bytes - 05:08:22, 17 November 2024
A-power.com.tw/IRF830I-HF
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"101 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","...
1545 Bytes - 05:08:22, 17 November 2024
Fairchildsemi.com/IRF830
949 Bytes - 05:08:22, 17 November 2024
Fairchildsemi.com/IRF830AJ69Z
{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"18 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"338 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"4.5 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Ty...
1500 Bytes - 05:08:22, 17 November 2024
Fairchildsemi.com/IRF830BJ69Z
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"18 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"270 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"4.5 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL...
1476 Bytes - 05:08:22, 17 November 2024
Fairchildsemi.com/IRF830_NL
966 Bytes - 05:08:22, 17 November 2024
Infineon.com/IRF8301MTRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Automotive","Continuous Drain Current":"34(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"2.8(W)","Operating Temp Range":"-40C to 150C","Package Type":"Direct-FET MT","Type":"Power MOSFET","Pin Count":"7","Number of Elements":"1"}...
1559 Bytes - 05:08:22, 17 November 2024
Infineon.com/IRF8302MTRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.8(W)","Continuous Drain Current":"31(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Automotive","Operating Temp Range":"-40C to 150C","Package Type":"Direct-FET MX","Type":"Power MOSFET","Pin Count":"7","Number of Elements":"1"}...
1566 Bytes - 05:08:22, 17 November 2024
Infineon.com/IRF8304MTRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.8(W)","Continuous Drain Current":"28(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Automotive","Operating Temp Range":"-40C to 150C","Package Type":"Direct-FET MX","Type":"Power MOSFET","Pin Count":"7","Number of Elements":"1"}...
1558 Bytes - 05:08:22, 17 November 2024
Infineon.com/IRF8306MTRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.1(W)","Continuous Drain Current":"23(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Automotive","Operating Temp Range":"-40C to 150C","Package Type":"Direct-FET MX","Type":"Power MOSFET","Pin Count":"7","Number of Elements":"1"}...
1562 Bytes - 05:08:22, 17 November 2024
Infineon.com/IRF830PBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"4.5(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"500(V)","Power Dissipation":"74(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-220-1","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1484 Bytes - 05:08:22, 17 November 2024
Irf.com/IRF8301MTRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.35V @ 150\u00b5A","Package / Case":"DirectFET\u2122 Isometric MT","Gate Charge (Qg) @ Vgs":"77nC @ 4.5V","Rds On (Max) @ Id, Vgs":"1.5 mOhm @ 32A, 10V","Product Photos":"IRF6614TR1PBF","PCN Assembly/Origin":"DirectFET Backend Wafer Processing 23/Oct/2013","Product Training Modules":"Discrete Power MOSFETs 40V and Below","PCN Other":"MSL Update 20/Feb/2014","Datasheets":"IRF8301MTRPbF","FET Type":"MOSFET N-Channel,...
2081 Bytes - 05:08:22, 17 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF8313.pdf | 0.25 | 1 | Request |
