Datasheet.Directory

{"Category":"MOSFET","Maximum Drain Source Voltage":"400 V","Dose Level":"100","Typical Turn-Off Delay Time":"58(Max) ns","Description":"Value","Maximum Continuous Drain Current":"2.9 A","Package":"3TO-39","Mounting":"Through Hole","Typical Rise Time":"62(Max) ns","Typical Turn-On Delay Time":"35(Max) ns","Rad Hard":"Yes","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"1390@12V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"International Rectifier"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"130 V","Dose Level":"100","Typical Turn-Off Delay Time":"35(Max) ns","Description":"Value","Maximum Continuous Drain Current":"20 A","Package":"3SMD-0.5","Mounting":"Surface Mount","Typical Rise Time":"100(Max) ns","Typical Turn-On Delay Time":"20(Max) ns","Rad Hard":"Yes","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"80@12V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"International Rectifier","Typ...

{"Category":"MOSFET","Maximum Drain Source Voltage":"200 V","Dose Level":"100","Typical Turn-Off Delay Time":"35(Max) ns","Description":"Value","Maximum Continuous Drain Current":"6.7 A","Package":"3TO-39","Mounting":"Through Hole","Typical Rise Time":"100(Max) ns","Typical Turn-On Delay Time":"25(Max) ns","Rad Hard":"Yes","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"240@12V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"International Rectifier","Typi...

{"Category":"MOSFET","Maximum Drain Source Voltage":"200 V","Dose Level":"100","Typical Turn-Off Delay Time":"35(Max) ns","Description":"Value","Maximum Continuous Drain Current":"6.7 A","Package":"3TO-39","Mounting":"Through Hole","Typical Rise Time":"100(Max) ns","Typical Turn-On Delay Time":"25(Max) ns","Rad Hard":"Yes","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"240@12V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"International Rectifier","Typi...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"22 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0850 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"88 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"22 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0850 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"88 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...

{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Dose Level":"100","Typical Turn-Off Delay Time":"200(Max) ns","Description":"Value","Maximum Continuous Drain Current":"35 A","Package":"3TO-254AA","Typical Turn-On Delay Time":"35(Max) ns","Mounting":"Through Hole","Typical Rise Time":"150(Max) ns","Channel Type":"P","Rad Hard":"Yes","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"53@12V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"Internatio...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0530 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"192 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakd...

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"48 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0480 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"192 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"140 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown V...