Product Datasheet Search Results:
- 2N7002TR
- Central Semiconductor Corp.
- 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- 2N7002TR13
- Central Semiconductor Corp.
- 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- 2N7002TR13LEADFREE
- Central Semiconductor Corp.
- 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- 2N7002TRLEADFREE
- Central Semiconductor Corp.
- 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- 2N7002T
- Diodes, Inc.
- TRANSISTOR, FET-N
- 2N7002T-13-F
- Diodes Incorporated
- SMALL SIGNAL, FET
- 2N7002T7-7
- Diodes Incorporated
- 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- 2N7002T-7-F
- Diodes
- MOSFET N-CH 60V 115MA SOT-523 - 2N7002T-7-F
- 2N7002TA
- Diodes [zetex]
- MOSFET N-CH 60V 115MA SOT23-3 - 2N7002TA
- 2N7002TC
- Diodes [zetex]
- MOSFET N-CHAN 60V SOT23-3 - 2N7002TC
- 2N7002TQ-13-F
- Diodes Incorporated
- SMALL SIGNAL, FET
- 2N7002TQ-7-F
- Diodes Incorporated
- SMALL SIGNAL, FET
- 2N7002T-7-F
- Diodes Inc
- Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523 T/R
- 2N7002TA
- Diodes Inc
- Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R
- 2N7002T
- Fairchild Semiconductor
- MOSFET N-Chan Enhancement Mode Field Effect
- 2N7002TR
- Fairchild Semiconductor
- FET Transistor, Enhancement, N Channel, 1V Threshold, ID 0.115A, Tape and Reel
- 2N7002T-TP
- Micro Commercial Components Corp.
- 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- 2N7002T
- Nxp Semiconductors
- MOSFET N-CH 60V 300MA SOT-23 - 2N7002T,215
- 2N7002T,215
- Nxp Semiconductors
- MOSFET N-CH 60V 300MA SOT-23 - 2N7002T,215
- 2N7002T/R
- Nxp Semiconductors / Philips Semiconductors
- N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V
- 2N7002T
- Aptina Imaging
- Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523FL T/R
- 2N7002TB
- Panjit Semiconductor
- 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- 2N7002TBT/R7
- Panjit Semiconductor
- 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- 2N7002T/R13
- Panjit Semiconductor
- 250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- 2N7002T/R7
- Panjit Semiconductor
- 250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- 2N7002T
- Secos Corporation
- SMALL SIGNAL, FET
- 2N7002T-C
- Secos Corporation
- SMALL SIGNAL, FET
- 2N7002T3
- Philips Semiconductors / Nxp Semiconductors
- N-channel enhancement mode field-effect transistor
- 2N7002TR
- Stmicroelectronics
- TRANS MOSFET N-CH 60V 0.25A 3SOT-23-3L T/R
- XP262N7002TR-G
- Torex Semiconductor
- Trans MOSFET N-CH 60V 0.3A T/R
- 2N7002T
- Transys Electronics
- Plastic-Encapsulated Transistors
- 2N7002T1-E3
- Vishay Telefunken
- TRANS MOSFET N-CH 60V 0.115A 3TO-236 REEL
- 2N7002T1E3
- Vishay Siliconix
- TRANS MOSFET SMD 2N7002L SOT23
- 2N7002TA
- Zetex Semiconductors
- MOSFET, SOT23 N-Channel Enhancement Mode Vertical DMOS FET, Tape and Reel
Product Details Search Results:
Centralsemi.com/2N7002TR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application...
1429 Bytes - 23:15:16, 19 September 2024
Centralsemi.com/2N7002TR13
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application...
1440 Bytes - 23:15:16, 19 September 2024
Centralsemi.com/2N7002TR13LEADFREE
{"Terminal Finish":"MATTE TIN (315)","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Br...
1539 Bytes - 23:15:16, 19 September 2024
Centralsemi.com/2N7002TRLEADFREE
{"Terminal Finish":"MATTE TIN (315)","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Br...
1527 Bytes - 23:15:16, 19 September 2024
Diodes.com/2N7002T-13-F
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...
745 Bytes - 23:15:16, 19 September 2024
Diodes.com/2N7002T-7
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"SOT-523 SOT-523","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"50pF @ 25V","Series":"-","Standard Package":"1","Supplier Device Package":"SOT-523","Datasheets":"2N7002T Datasheet","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 50mA, 5V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Cut Tape (CT)","Power - Max":"150mW","RoHS Information":"RoHS Cert of Compliance","Packag...
1609 Bytes - 23:15:16, 19 September 2024
Diodes.com/2N7002T7-7
{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.1150 A","Transistor Element Material":"SILICON","Number of Elements":"1","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Volta...
1244 Bytes - 23:15:16, 19 September 2024
Diodes.com/2N7002T-7-F
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Catalog Drawings":"SOT-523 Package Top SOT-523 Package Side 1 SOT-523 Package Side 2","Package \/ Case":"SOT-523","Current - Continuous Drain (Id) @ 25\u00b0C":"115mA (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT-523 SOT-523","PCN Design\/Specification":"Green Encapsulate Change 09\/July\/2007","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 50mA, 5V","Datasheets":"2N7002T Datasheet","FET Type":"MOS...
1933 Bytes - 23:15:16, 19 September 2024
Diodes.com/2N7002TA
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Other Drawings":"SOT-23 Top","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"115mA (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT23","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 500mA, 10V","Datasheets":"2N7002TC Datasheet","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vdss)":"60V","PCN Obsolescence\/ EOL"...
1672 Bytes - 23:15:16, 19 September 2024
Diodes.com/2N7002TC
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"SOT23","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Series":"-","Standard Package":"10,000","Supplier Device Package":"SOT-23-3","Datasheets":"2N7002TC Datasheet","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"330mW","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Mounting Type":"Surface Mount","Drain to Source...
1517 Bytes - 23:15:16, 19 September 2024
Diodes.com/2N7002TQ-13-F
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...
750 Bytes - 23:15:16, 19 September 2024
Diodes.com/2N7002TQ-7-F
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...
745 Bytes - 23:15:16, 19 September 2024
Diodes.com/2N7002T-7-F
{"Polarity":"N","Continuous Drain Current":"0.115(A)","Mounting":"Surface Mount","Output Power (Max)":"Not Required W","Type":"Small Signal","Gate-Source Voltage (Max)":"'\u00b120(V)","Drain Efficiency":"Not Required %","Noise Figure":"Not Required dB","Operating Temperature Classification":"Military","Package Type":"SOT-523","Drain-Source On-Res":"7.5(ohm)","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Operating Temp Range":"-55C to 150C","Pin Count":"3","Channel Mode":"Enhancement"...
1695 Bytes - 23:15:16, 19 September 2024
Diodes.com/2N7002TA
{"Polarity":"N","Continuous Drain Current":"0.21(A)","Mounting":"Surface Mount","Output Power (Max)":"Not Required W","Type":"Small Signal","Gate-Source Voltage (Max)":"'\u00b120(V)","Drain Efficiency":"Not Required %","Noise Figure":"Not Required dB","Operating Temperature Classification":"Military","Package Type":"SOT-23","Drain-Source On-Res":"7.5(ohm)","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Operating Temp Range":"-55C to 150C","Pin Count":"3","Channel Mode":"Enhancement","...
1679 Bytes - 23:15:16, 19 September 2024
Fairchildsemi.com/2N7002T
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Package \/ Case":"SC-89, SOT-490","Current - Continuous Drain (Id) @ 25\u00b0C":"115mA (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"PowerTrench Series SC-89-3","PCN Design\/Specification":"Mold Compound 20\/Aug\/2008 IDSS Parameter Update 11\/Mar\/2015","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 50mA, 5V","Datasheets":"2N7002T Datasheet","FET Type":"MOSFET N-Channel, Metal Oxide","Standard...
1858 Bytes - 23:15:16, 19 September 2024
Fairchildsemi.com/2N7002TR
{"C(iss) Max. (F)":"50p","Absolute Max. Power Diss. (W)":"200m","@V(GS) (V) (Test Condition)":"5.0","r(DS)on Max. (Ohms)":"7.5","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"800m","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"80m","V(BR)GSS (V)":"40","@I(D) (A) (Test Condition)":"500m","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.5","V(GS)th Min. (V)":"1.0","Package":"TO-236AB","Military":"N","I(DSS) Max. (A)":"1.0u","@(VDS) (V) (Test Condition)":"20","V(BR)DSS ...
1139 Bytes - 23:15:16, 19 September 2024
Mccsemi.com/2N7002T-TP
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"13.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdo...
1557 Bytes - 23:15:16, 19 September 2024
Nxp.com/2N7002T,215
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 1mA","Series":"-","Standard Package":"3,000","Supplier Device Package":"SOT-23 (TO-236AB)","Datasheets":"2N7002T Datasheet","Rds On (Max) @ Id, Vgs":"5 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"830mW","Related Products":"732-1114-2-ND - FIXED IND 470NH 26A 0.9 MOHM SMD 732-1114-1-ND - ...
1878 Bytes - 23:15:16, 19 September 2024
Onsemi.com/2N7002T
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.115(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"0.2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-523FL","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...
1465 Bytes - 23:15:16, 19 September 2024
Panjit.com.tw/2N7002TB
{"Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.1500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","S...
1456 Bytes - 23:15:16, 19 September 2024
Panjit.com.tw/2N7002TBT/R7
{"Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.1500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","S...
1486 Bytes - 23:15:16, 19 September 2024
Panjit.com.tw/2N7002T/R13
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMIC...
1556 Bytes - 23:15:16, 19 September 2024
Panjit.com.tw/2N7002T/R7
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMIC...
1550 Bytes - 23:15:16, 19 September 2024
Secosgmbh.com/2N7002T
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...
712 Bytes - 23:15:16, 19 September 2024
Secosgmbh.com/2N7002T-C
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...
726 Bytes - 23:15:16, 19 September 2024
Semiconductors.philips.com/2N7002T/R
{"C(iss) Max. (F)":"50p","Absolute Max. Power Diss. (W)":"200m","@V(GS) (V) (Test Condition)":"5.0","r(DS)on Max. (Ohms)":"7.5","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"800m","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"80m","V(BR)GSS (V)":"40","@I(D) (A) (Test Condition)":"500m","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.5","V(GS)th Min. (V)":"1.0","Package":"TO-236AB","Military":"N","I(DSS) Max. (A)":"1.0u","@(VDS) (V) (Test Condition)":"20","V(BR)DSS ...
1199 Bytes - 23:15:16, 19 September 2024
Torex_semiconductor/XP262N7002TR-G
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"0.4(W)","Continuous Drain Current":"0.3(A)","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Type":"Power MOSFET","Number of Elements":"1"}...
1352 Bytes - 23:15:16, 19 September 2024